But a small fraction of leakage current flows throw the transistor from collector to emitter i.e, ICEO.Ī transistor is said to be inactive state only when the base-emitter region is forward bias and collector-base region reverse bias. Hence there will be no flow of output current to the base of the transistor where IBE = 0, and also there will be no output current flowing through the collector to emitter since IC = IB = 0 which indicates transistor is in off state that is a cut off region. Power Transistor BJT works in four regions of operation they are NPN-power-transistor-construction Operation of Power Transistor Where the emitter terminal is connected to highly doped n-type layer, below which a moderately doped p-layer of 1016 cm-3 concentration is present, and a lightly doped n- layer of 1014 cm-3 concentration, which is also named as collector drift region, where the collector drift region decides the break-over voltage of the device and at the bottom, it has an n+ layer which is highly doped n-type layer of 1019 cm-3 concentration, where the collector is etched away for user interface. The following construction shows a P-N-P type, which consists of three terminals emitter, base, and collector. It can be designed using P-N-P or an N-P-N transistor. The Power Transistor BJT is a vertically oriented device having a large area of cross-sectional with alternate P and N-type layers are connected together. At the input of the circuit, the losses are less.The following are the characteristics of Insulated-gate Bipolar transistor (IGBTs), insulated-gate-bipolar-transistor-(IGBTs) ![]() They are commonly applied in power electronics devices like inverters, converters, and power supply. Insulated-gate Bipolar Transistor (IGBTs)Īs the name suggests an IGBT is a combination of FET and BJT transistor whose function is based on its gate, where the transistor can be turned on or off depending on the gate. The following are the characteristics of static induction transistor, static-induction-transistor The main advantage of the static induction transistor is that it has a higher voltage breakdown in comparison with FET- field-effect transistor. It is a device that has three terminals, with high power and frequency which is vertically oriented.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |